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BSC0901NSATMA1 - Infineon

Description: Infineon BSC0901NSATMA1 N-channel MOSFET, 100 A, 30 V OptiMOS, 8-Pin TDSON

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Part Image BSC0901NSIATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSC0901NS Infineon Technologies AG

Power Field-Effect Transistor, 133A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSC0901NSIXT Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSC0901NSXT Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET