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BUK769R6-80E,118 - Nexperia

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BUK769R6-80E,118 Details

  • Manufacturer Part Number:

    BUK769R6-80E,118

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK

  • Package Description:

    D2PAK-3/2

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT404

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    146 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0096 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    282 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 13 INCH

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    182 W

  • Pulsed Drain Current-Max (IDM):

    354 A

  • Reference Standard:

    AEC-Q101; IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BUK769R6-80E,118 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BUK769R6-80E,118 is -55°C to 175°C.
  • To ensure safe operating area, follow the guidelines in the datasheet, considering factors like voltage, current, and temperature. Additionally, use a thermal model to simulate the device's behavior under various operating conditions.
  • The recommended gate drive voltage for the BUK769R6-80E,118 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To minimize power losses, optimize the gate drive circuitry, use a low-inductance layout, and ensure proper thermal management. Additionally, consider using a MOSFET with a lower RDS(on) value, like the BUK769R6-80E,118, which has a typical RDS(on) of 6.8mΩ.
  • Yes, the BUK769R6-80E,118 is suitable for high-frequency switching applications due to its low gate charge (Qg) of 43nC and low output capacitance (Coss) of 220pF.

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BUK769R6-80E,118 Overview

Use the download button to access the BUK769R6-80E,118 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like BUK76, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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For a full list of alternate parts for BUK769R6-80E,118, check out Findchips.com