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BUK9Y19-55B,115 - Nexperia

Description: MOSFET TRENCH 31V-99V G3

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BUK9Y19-55B,115 Details

  • Manufacturer Part Number:

    BUK9Y19-55B,115

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC

  • Package Description:

    LFPAK-4

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT669

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2017-02-01

  • Manufacturer:

    Nexperia

  • YTEOL:

    5

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    46 A

  • Drain-source On Resistance-Max:

    0.021 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    118 pF

  • JEDEC-95 Code:

    MO-235

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    85 W

  • Pulsed Drain Current-Max (IDM):

    184 A

  • Reference Standard:

    AEC-Q101; IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BUK9Y19-55B,115 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for BUK9Y19-55B,115 is -55°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 1.5°C/W or lower, and ensuring good airflow around the device.
  • The recommended gate resistor value for BUK9Y19-55B,115 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, BUK9Y19-55B,115 is suitable for high-reliability applications due to its robust design and manufacturing process, which ensures high quality and reliability.
  • To protect the device from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container.

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BUK9Y19-55B,115 Overview

Use the download button to access the BUK9Y19-55B,115 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like BUK9Y, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Part Image BUK9Y19-55B NXP Semiconductors

Power Field-Effect Transistor, 46A I(D), 55V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

Part Image BUK9Y19-55B,115 NXP Semiconductors

Power Field-Effect Transistor, 46A I(D), 55V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235