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C3M0120090D - Wolfspeed

Description: 900 V, 120 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET

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C3M0120090D - Wolfspeed PCB footprint - Other - Other - TO-247-3_2025
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C3M0120090D - Wolfspeed  - 3D model - Other - TO-247-3_2025
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C3M0120090D Details

  • Manufacturer Part Number:

    C3M0120090D

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    23 A

  • Drain-source On Resistance-Max:

    0.155 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    97 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0120090D Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the C3M0120090D is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the C3M0120090D is between 15V and 20V. However, it's essential to consult the datasheet and application notes for specific gate drive requirements, as excessive voltage can damage the device.
  • Yes, the C3M0120090D is suitable for high-frequency applications. However, it's crucial to consider the device's switching characteristics, parasitic inductance, and layout to minimize ringing and ensure reliable operation.
  • To protect the C3M0120090D from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator and current limiter in the circuit design. Additionally, consider using overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device.

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C3M0120090D Overview

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