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C3M0280090J - Wolfspeed

Description: 900 V, 280 mΩ, TO-263-7 package, Industrial qualified, Discrete SiC MOSFET

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PCB Footprints
C3M0280090J - Wolfspeed PCB footprint - Other - Other - TO- 263- 7
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3D Models
C3M0280090J - Wolfspeed  - 3D model - Other - TO- 263- 7
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C3M0280090J Details

  • Manufacturer Part Number:

    C3M0280090J

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    22 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0280090J Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the C3M0280090J is -55°C to 175°C.
  • To ensure reliability, follow the recommended assembly and soldering procedures, and ensure proper thermal management, such as using a heat sink and thermal interface material.
  • The recommended gate drive voltage for the C3M0280090J is +15V to +20V, with a maximum gate-source voltage of ±30V.
  • Yes, the C3M0280090J can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent shoot-through currents.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor, to prevent damage to the device.

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