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C3M0350120D - Wolfspeed

Description: 1200 V, 350 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET

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Symbol
C3M0350120D - Wolfspeed - PCB symbol
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PCB Footprints
C3M0350120D - Wolfspeed PCB footprint - Other - Other - TO-247-3_2025-5
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3D Models
C3M0350120D - Wolfspeed - 3D model - Other - TO-247-3_2025-5
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C3M0350120D Details

  • Manufacturer Part Number:

    C3M0350120D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    7.6 A

  • Drain-source On Resistance-Max:

    0.455 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.4 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0350120D Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the C3M0350120D is 175°C. Exceeding this temperature can lead to reduced performance and lifespan.
  • Proper thermal management can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good thermal contact between the device and heat sink. Additionally, keeping the ambient temperature below 50°C can help reduce thermal stress.
  • The recommended gate drive voltage for the C3M0350120D is between 15V and 20V. This ensures proper switching and minimizes the risk of damage to the device.
  • Yes, the C3M0350120D can be used in a parallel configuration to increase the current handling capability. However, it is essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • A good PCB layout for the C3M0350120D should minimize the loop inductance and ensure a low-impedance path for the high-frequency currents. This can be achieved by using a 4-layer PCB with a solid ground plane, and placing the device close to the DC bus capacitors.

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C3M0350120D Overview

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