SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min:
1200 V
Drain Current-Max (ID):
450 A
Drain-source On Resistance-Max:
0.0037 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
90 pF
JESD-30 Code:
R-PUFM-X11
Number of Elements:
2
Number of Terminals:
11
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-40 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
900 A
Reference Standard:
IEC-60747-8-4
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON CARBIDE
CAB450M12XM3 Frequently Asked Questions (FAQs)
The maximum junction temperature of the CAB450M12XM3 is 175°C. Exceeding this temperature can reduce the device's lifespan and affect its performance.
To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, a thermal interface material (TIM) with a thermal conductivity of at least 5 W/m-K should be used to fill the gap between the device and the heat sink.
The recommended gate drive voltage for the CAB450M12XM3 is between 15V and 20V. This ensures proper switching and minimizes the risk of device damage.
Yes, the CAB450M12XM3 can be used in a parallel configuration to increase the overall current handling capability. However, it is essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
A low-inductance PCB layout is recommended for the CAB450M12XM3. This can be achieved by using a compact layout, minimizing the length of the power loops, and using a solid ground plane to reduce electromagnetic interference (EMI).
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CAB450M12XM3 Overview
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