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CGHV40180F - Wolfspeed

Description: RF JFET Transistors GaN HEMT

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CGHV40180F - Wolfspeed  - 3D model
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CGHV40180F Details

  • Manufacturer Part Number:

    CGHV40180F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    12.1 A

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    1.23 pF

  • Highest Frequency Band:

    L BAND

  • JESD-30 Code:

    R-CDFM-F2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Gain-Min (Gp):

    19.3 dB

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    GALLIUM NITRIDE

CGHV40180F Frequently Asked Questions (FAQs)

  • A good thermal management strategy is crucial for high-power devices like the CGHV40180F. A recommended PCB layout would include a thermal pad on the bottom of the device, with multiple vias connecting to a solid copper plane on the backside of the board. This helps to dissipate heat efficiently. Additionally, a heat sink or a thermal interface material can be used to further improve heat dissipation.
  • To ensure stable operation and prevent oscillations, it's essential to follow good design practices such as using a stable biasing scheme, providing adequate decoupling, and using a proper output matching network. Additionally, the device's output impedance should be matched to the load impedance to prevent reflections and oscillations.
  • The recommended drive and bias conditions for the CGHV40180F can be found in the datasheet, but as a general guideline, a gate voltage of around -2.5V to -3.5V and a drain voltage of 28-30V are typical. The quiescent current should be set to around 100-200mA. However, the optimal drive and bias conditions may vary depending on the specific application and design requirements.
  • To protect the CGHV40180F from ESD and overvoltage, it's essential to follow proper handling and assembly procedures. During handling, the device should be stored in an anti-static bag or wrapped in anti-static material. In the circuit, ESD protection diodes and overvoltage protection circuits can be used to prevent damage from voltage spikes and ESD events.
  • The CGHV40180F has a maximum junction temperature of 150°C. To ensure reliable operation, the device should be derated for high-power operation. A good rule of thumb is to derate the device by 1-2% per degree Celsius above 25°C. This means that if the device is operated at 50°C, the maximum power rating should be reduced by 25-50%.

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CGHV40180F Overview

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