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DN3545N8-G - Microchip

Description: MOSFET N-CH 450V 200MA TO243AA

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DN3545N8-G Details

  • Manufacturer Part Number:

    DN3545N8-G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-89, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT-89-3

  • Country Of Origin:

    Mainland China, Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    7 Weeks

  • Manufacturer:

    Microchip Technology Inc

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    20 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JEDEC-95 Code:

    TO-243AA

  • JESD-30 Code:

    R-PSSO-F3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Pulsed Drain Current-Max (IDM):

    0.3 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    70 ns

  • Turn-on Time-Max (ton):

    50 ns

DN3545N8-G Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure proper PCB design, component selection, and layout to minimize thermal resistance.
  • Use a multi-layer PCB with a solid ground plane, and ensure proper component placement and routing. Implement EMI filters, and consider shielding and grounding techniques to minimize radiation.
  • Use a low-ESR capacitor (e.g., 10uF) for power supply decoupling, and consider adding a 100nF capacitor for high-frequency decoupling. Ensure a stable power supply with minimal noise and ripple.
  • Use a 4-channel oscilloscope with a bandwidth of at least 500 MHz. Ensure proper probe selection and placement to minimize signal degradation and noise.

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DN3545N8-G Overview

Use the download button to access the DN3545N8-G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like DN354, or try a keyword search, such as Power Field-Effect Transistors

About Microchip

Microchip Technology Inc. is a leading manufacturer of microcontrollers and semiconductor devices for a wide range of applications in the aerospace, automotive, consumer electronics, industrial, and medical industries. Alongside a comprehensive product portfolio, Microchip Technology Inc. also provides easy-to-use development tools that enable engineers to create optimal designs quickly with minimal iterations to reduce risk while lowering total system costs to market. Headquartered in Chandler, Arizona, th

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Power Field-Effect Transistor, 0.2A I(D), 450V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA