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DTA123YU3HZGT106 - ROHM Semiconductor

Description: PNP, SOT-323, R1≠R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) for automotive

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DTA123YU3HZGT106 Details

  • Manufacturer Part Number:

    DTA123YU3HZGT106

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-70, 3 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-04-23

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    9

  • Additional Feature:

    BUILT-IN BIAS RESISTOR RATIO IS 4.5

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    33

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

DTA123YU3HZGT106 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the DTA123YU3HZGT106 is -55°C to 150°C.
  • To ensure reliability, follow the recommended derating curves for voltage and current, and consider using a heat sink or thermal management system to keep the junction temperature below the maximum rating.
  • The recommended storage temperature range is -40°C to 100°C, and the recommended storage humidity range is 60% to 90% RH.
  • Yes, the DTA123YU3HZGT106 is suitable for switching applications due to its low saturation voltage and high switching speed. However, ensure that the device is properly biased and that the switching frequency is within the recommended range.
  • Handle the device in an ESD-protected environment, use ESD-protected tools and equipment, and follow proper grounding procedures to prevent electrostatic discharge damage.

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DTA123YU3HZGT106 Overview

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