Part Image

DTA143TCAHZGT116 - ROHM Semiconductor

Description: PNP, SOT-23, R1 Alone Type Digital Transistor (Bias Resistor Built-in Transistor) for automotive

Download DTA143TCAHZGT116 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
DTA143TCAHZGT116 - ROHM Semiconductor  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

DTA143TCAHZGT116 Details

  • Manufacturer Part Number:

    DTA143TCAHZGT116

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.75

  • Date Of Intro:

    2016-07-15

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Additional Feature:

    BUILT IN BIAS RESISTOR

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    0.2 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

DTA143TCAHZGT116 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Monitor the device's voltage, current, and temperature to ensure they are within the specified limits. Use a thermal management strategy to keep the junction temperature below 150°C.
  • A low-impedance drive circuit with a resistive load is recommended. A gate resistor of 10-20 ohms is suggested to prevent ringing and ensure stable operation.
  • Use a snubber circuit or a common-mode choke to reduce electromagnetic interference (EMI). Ensure the PCB layout is designed to minimize parasitic inductance and capacitance.
  • Store the devices in a dry, cool place, away from direct sunlight. Handle the devices by the body, avoiding touching the leads or die. Use anti-static packaging and follow ESD precautions during handling and assembly.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

DTA143TCAHZGT116 Overview

Use the download button to access the DTA143TCAHZGT116 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like DTA14, or try a keyword search, such as Small Signal Bipolar Transistors

Parts related to DTA143TCAHZGT116

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

DTA143TCAHZGT116 Alternates

Showing results

Image Part Number Model
Part Image DTA143TE Galaxy Semi-Conductor Co Ltd

Small Signal Bipolar Transistor,

Part Image DTA143TE Tak Cheong Electronics (Holdings) Co Ltd

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon