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EGP30G - onsemi

Description: Low forward voltage, high current capability; High surge current capability; Low leakage current; Superfast recovery time for high efficiency; Glass passivated cavity-free junction

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EGP30G - onsemi  - 3D model
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EGP30G Details

  • Manufacturer Part Number:

    EGP30G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    Axial Lead

  • Manufacturer Package Code:

    017AF

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.99

  • Application:

    EFFICIENCY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.3 V

  • JEDEC-95 Code:

    DO-201AD

  • JESD-30 Code:

    O-PALF-W2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    125 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    3 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Power Dissipation-Max:

    6.25 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    400 V

  • Reverse Recovery Time-Max:

    0.05 µs

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

EGP30G Frequently Asked Questions (FAQs)

  • The EGP30G can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
  • The EGP30G requires a bias voltage of 2.5V to 5.5V, and the recommended bias current is 1mA to 10mA. Ensure the bias circuit is designed to provide a stable voltage and current to the device.
  • Use a 4-layer PCB with a solid ground plane, and ensure the device is mounted on a thermal pad with a thermal conductivity of at least 1 W/m-K. A heat sink or thermal interface material may be required for high-power applications.
  • The EGP30G has an internal ESD protection diode, but additional external protection may be required depending on the application. Use ESD-sensitive handling procedures and consider adding external ESD protection devices if necessary.
  • Store the EGP30G in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, avoiding touching the leads or die. Use anti-static packaging and follow ESD-safe handling procedures.

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EGP30G Overview

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Part Image RGP30GZ Galaxy Semi-Conductor Co Ltd

Rectifier Diode, 1 Element, 3A, 400V V(RRM),

Part Image RGP30GZ Galaxy Microelectronics

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-27

Part Image RGP30G Gulfsemi

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD

Part Image EGP30G(Z) Galaxy Semi-Conductor Co Ltd

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-27,

Part Image RGP30G/4 Vishay Semiconductors

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD

For a full list of alternate parts for EGP30G, check out Findchips.com