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F1956NBGI8 - Renesas Electronics

Description: The F1956 is part of a family of Glitch-Free™ DSAs which offers very high reliability due to its monolithic silicon die construction in a compact 5 x 5 mm 32-pin TQFN package.  It has very low insertion loss is with minimal distortion and is designed with a 50Ω input and output impedance. Additionally, the device is designed to have high accurate which improves SNR and/or ACLR by ensuring the system gain is achieved as close to targeted as possible. 

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Symbol
F1956NBGI8 - Renesas Electronics - PCB symbol
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PCB Footprints
F1956NBGI8 - Renesas Electronics PCB footprint - Quad Flat No-Lead - Quad Flat No-Lead - NBG32P2
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3D Models
F1956NBGI8 - Renesas Electronics - 3D model - Quad Flat No-Lead - NBG32P2
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F1956NBGI8 Details

  • Manufacturer Part Number:

    F1956NBGI8

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    VFQFPN

  • Pin Count:

    32

  • Manufacturer Package Code:

    NBG32P2

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.01

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    6.6

  • Attenuation-Nom:

    31.75 dB

  • Characteristic Impedance:

    50 Ω

  • Construction:

    COMPONENT

  • Input Power-Max (CW):

    34 dBm

  • Insertion Loss-Max:

    3 dB

  • JESD-609 Code:

    e3

  • Mounting Feature:

    SURFACE MOUNT

  • Number of Terminals:

    32

  • Operating Frequency-Max:

    6000 MHz

  • Operating Frequency-Min:

    1 MHz

  • Operating Temperature-Max:

    105 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Equivalence Code:

    LCC32,.2SQ,20

  • Power Supplies:

    3.3 V

  • RF/Microwave Device Type:

    VARIABLE ATTENUATOR

  • Supply Current-Max:

    0.8 mA

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • VSWR-Max:

    1.5

F1956NBGI8 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the package for airflow and heat dissipation.
  • Power up the device in the following sequence: VCC, AVCC, and then DVCC. Ensure a minimum delay of 10ms between each power-up step to prevent latch-up.
  • Use a shielded enclosure, and ensure a minimum of 10mm clearance between the device and any metal components. Implement a common-mode choke and ferrite beads on the power lines to reduce EMI.
  • Use the power-down mode (PDN) and dynamic voltage frequency scaling (DVFS) to reduce power consumption. Optimize the clock frequency and voltage settings based on the application's requirements.
  • The F1956NBGI8 is manufactured according to the IEC 60749 standard for semiconductor devices. It meets the requirements for automotive and industrial applications, including AEC-Q100 and IATF 16949 certifications.

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F1956NBGI8 Overview

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