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FCB20N60-F085 - onsemi

Description: Obsolete - N-Channel MOSFET 600V, 20A, 190mΩ,

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FCB20N60-F085 - onsemi PCB footprint - Other - Other - FCB20N60-F085
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FCB20N60-F085 Details

  • Manufacturer Part Number:

    FCB20N60-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-263 2L (D2PAK)

  • Package Description:

    ROHS COMPLIANT PACKAGE-3/2

  • Manufacturer Package Code:

    418AJ

  • Reach Compliance Code:

    Not Compliant

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    480 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.198 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    341 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCB20N60-F085 Frequently Asked Questions (FAQs)

  • The recommended gate resistor value for FCB20N60-F085 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) and ringing, but may increase the turn-on time.
  • To ensure reliable operation of FCB20N60-F085 in high-temperature environments, it is essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, the device should be operated within its specified maximum junction temperature (Tj) of 150°C.
  • The maximum allowed voltage overshoot for FCB20N60-F085 is typically 10% to 20% above the maximum rated voltage (Vdss) of 600V. However, it is recommended to limit the voltage overshoot to 5% or less to ensure reliable operation and prevent damage to the device.
  • Yes, FCB20N60-F085 can be used in a parallel configuration to increase current handling. However, it is essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential damage to the devices.
  • To protect FCB20N60-F085 from electrostatic discharge (ESD), it is recommended to follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, the device should be connected to a ground plane or a protective circuit to prevent ESD damage.

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FCB20N60-F085 Overview

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Part Image FCB20N60_F085 onsemi

600V, 20A, 173mΩ, D2PAK N-Channel SuperFET™, TO-263 2L (D2PAK), 800-TAPE REEL