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FCD600N60Z - onsemi

Description: Max. RDS(on) = 600 mΩ; 650 V at TJ = 150°C; 100% Avalanche Tested; Ultra-Low Gate Charge ( Typ. Qg = 20nC ); Low Effective Output Capacitance ( Typ. Coss.eff = 74 pF ); ESD Improved Capacity

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PCB Footprints
FCD600N60Z - onsemi PCB footprint - Other - Other - TO252 (D-PAK), MOLDED, 3-LEAD, OPTION AA&AB_2022
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FCD600N60Z Details

  • Manufacturer Part Number:

    FCD600N60Z

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    135 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    7.4 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    89 W

  • Pulsed Drain Current-Max (IDM):

    22.2 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCD600N60Z Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCD600N60Z is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and provide adequate airflow around the heat sink.
  • The recommended gate drive voltage for the FCD600N60Z is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase gate oxide stress.
  • Yes, the FCD600N60Z can be used in a parallel configuration, but it's essential to ensure that the devices are matched in terms of threshold voltage and transconductance to prevent uneven current sharing.
  • To protect the FCD600N60Z from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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FCD600N60Z Overview

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