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FCD600N65S3R0 - onsemi

Description: 700 V @ TJ= 150 oC; Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF); Ultra Low Gate Charge (Typ. Qg = 11 nC); Optimized Capacitance; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 493 mΩ; Internal Gate Resistance: 0.9 Ω

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FCD600N65S3R0 - onsemi

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