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FCD850N80Z - onsemi

Description: Ultra Low Gate Charge (Typ. Qg = 22 nC); RoHS Compliant; Typ. RDS(on) = 710 mΩ(Typ.); Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF); 100% Avalanche Tested; Low Eoss (Typ. 2.3 uJ @ 400V); ESD Improved Capability

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FCD850N80Z - onsemi

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