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FCP165N65S3R0 - onsemi

Description: 700 V @ TJ = 150 °C; Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF); Ultra Low Gate Charge (Typ. Qg = 39 nC); Optimized Capacitance; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 140 mΩ; Internal Gate Resistance: 0.5 Ω

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FCP165N65S3R0 - onsemi

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