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FCP260N65S3 - onsemi

Description: 700 V @ TJ = 150 °C; Typ. RDS(on) = 222 mΩ; Ultra Low Gate Charge (Typ. Qg= 24 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF); 100% Avalanche Tested; RoHS Compliant; Optimized Capacitance; Internal Gate resistance: 8.7ohm

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FCP260N65S3 Alternates

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Image Part Number Model
Part Image IPP60R299CP Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB