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FCPF20N60 - onsemi

Description: 100% Avalanche Tested; Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ); 650V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 75 nC ); Typ. RDS(on) = 150 mΩ

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FCPF20N60 - onsemi  - 3D model
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FCPF20N60 Details

  • Manufacturer Part Number:

    FCPF20N60

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    690 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCPF20N60 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCPF20N60 is 150°C, but it's recommended to keep it below 125°C for reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the FCPF20N60 is between 10V and 15V, with a maximum of 20V.
  • Yes, the FCPF20N60 is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the device is properly cooled and the gate drive is optimized for high-frequency operation.
  • The FCPF20N60 can be protected from overvoltage and overcurrent by using a voltage clamp circuit and a current sense resistor, respectively.

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FCPF20N60 Overview

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Part Image FCPF20N60 Rochester Electronics LLC

20A, 600V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN

Part Image FCPF20N60 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB