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FCPF2250N80Z - onsemi

Description: ESD Improved Capability; RDS(on) = 1.8 Ω(Typ.); Ultra Low Gate Charge (Typ. Qg = 11 nC); 100% Avalanche Tested; Low Eoss (Typ. 1.1 uJ @ 400V); Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF); RoHS Compliant

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FCPF2250N80Z - onsemi

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