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FCPF260N60E - onsemi

Description: Low Effective Output Capacitance ( Typ. Coss.eff = 129 pF ); 100% Avalanche Tested; Ultra Low Gate Charge ( Typ. Qg = 48 nC ); Maximum RDS(on) = 260 mΩ; 650 V at TJ = 150°C

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FCPF260N60E Details

  • Manufacturer Part Number:

    FCPF260N60E

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    15 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    36 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

FCPF260N60E Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCPF260N60E is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and provide adequate airflow around the heat sink.
  • The recommended gate drive voltage for the FCPF260N60E is between 10V and 15V. However, the exact voltage may vary depending on the specific application and switching frequency.
  • Yes, the FCPF260N60E is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching losses and thermal performance should be carefully evaluated to ensure reliable operation.
  • To protect the FCPF260N60E from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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FCPF260N60E Overview

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Part Image FCPF260N60E-F152 onsemi

Power Field-Effect Transistor, 15A I(D), 600V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image FCPF260N60E_F152 onsemi

Power Field-Effect Transistor, 15A I(D), 600V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB