FCPF260N65FL1-F154 - onsemi

Description: 700 V @TJ = 150°C; Low Effective Output Capacitance (Typ. Coss(eff.) = 223 pF); Ultra Low Gate Charge (Typ. Qg = 46 nC); RDS(on) = 220 mΩ (Typ.); 100% Avalanche Tested; RoHS Compliant

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Image	Part Number	Model
	FCPF260N65FL1 onsemi Power Field-Effect Transistor, 15A I(D), 650V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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FCPF260N65FL1-F154 - onsemi

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