FDA16N50-F109 - onsemi

Description: RDS(on) = 380mΩ ( Max.)@ VGS = 10V, ID = 8.3A; 100% avalanche tested; Low Crss ( Typ. 20pF); Low gate charge ( Typ. 32nC)

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Image	Part Number	Model
	FDA16N50_F109 onsemi N-Channel UniFETTM MOSFET 500V, 16.5A, 380 mΩ, TO-3PN 3L, 3600-RAIL
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FDA16N50-F109 - onsemi

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