Part Image

FDA50N50 - onsemi

Description: Power MOSFET, N-Channel, UniFETTM, 500V, 48A, 105mΩ, TO-3P

Download FDA50N50 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
FDA50N50 - onsemi  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

FDA50N50 Details

  • Manufacturer Part Number:

    FDA50N50

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3P-3L

  • Package Description:

    TO-3PN, 3 PIN

  • Manufacturer Package Code:

    340BZ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1868 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    48 A

  • Drain-source On Resistance-Max:

    0.105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    65 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    625 W

  • Pulsed Drain Current-Max (IDM):

    192 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    930 ns

  • Turn-on Time-Max (ton):

    950 ns

FDA50N50 Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a thermal relief pattern on the bottom layer and a solid ground plane on the top layer is recommended. This helps to dissipate heat efficiently and reduce thermal resistance.
  • Ensure that the device is operated within the recommended temperature range (up to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowed voltage transient is 60V for a duration of 50ns. Exceeding this may cause damage to the device.
  • Use ESD protection devices such as TVS diodes or ESD suppressors on the input and output pins. Handle the device by the body or use an ESD wrist strap to prevent static buildup.
  • A gate drive voltage of 10-15V and a current of 1-2A is recommended for optimal switching performance. Ensure that the gate drive circuit is designed to provide a fast rise and fall time (<10ns) to minimize switching losses.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

FDA50N50 Overview

Use the download button to access the FDA50N50 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like FDA50, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDA50N50

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

FDA50N50 Alternates

Showing results

Image Part Number Model
Part Image STW45NM50 STMicroelectronics

Power Field-Effect Transistor, 45A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC