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FDB016N04AL7 - onsemi

Description: High Power and Current Handling Capability; High Performance Trench Technology for Extremely Low RDS(on); RoHS Compliant; Low Gate Charge, QG = 129nC ( Typ.); Fast Switching Speed; RDS(on) = 1.16mΩ ( Typ.)@ VGS = 10V, ID = 80A

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FDB016N04AL7 Overview

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