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FDB031N08 - onsemi

Description: High performance trench technology for extremely low RDS(on) ; Fast switching speed; High power and current handling capability; RoHS compliant; Low Gate Charge; RDS(on) = 2.4mΩ ( Typ.) @ VGS = 10V, ID = 75A

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PCB Footprints
FDB031N08 - onsemi PCB footprint - Other - Other - TO263 (D2PAK)
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FDB031N08 - onsemi  - 3D model - Other - TO263 (D2PAK)
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FDB031N08 Details

  • Manufacturer Part Number:

    FDB031N08

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    D3PAK-3/2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1995 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0031 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    800 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Pulsed Drain Current-Max (IDM):

    940 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    932 ns

  • Turn-on Time-Max (ton):

    862 ns

FDB031N08 Frequently Asked Questions (FAQs)

  • The maximum SOA for the FDB031N08 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's voltage, current, and power ratings, as well as its thermal impedance and maximum junction temperature.
  • To ensure proper biasing, follow the recommended gate-source voltage (Vgs) and drain-source voltage (Vds) ratings in the datasheet. Additionally, consider the device's threshold voltage (Vth) and ensure the gate drive voltage is sufficient to fully enhance the device. A gate resistor may also be necessary to prevent oscillations and ensure stable operation.
  • For optimal thermal performance, use a PCB layout that minimizes thermal resistance and ensures good heat dissipation. This can be achieved by using a thermal pad, thermal vias, and a heat sink if necessary. Follow the recommended land pattern and thermal design guidelines in the datasheet or application notes.
  • To protect the FDB031N08 from ESD and overvoltage, follow proper handling and storage procedures. Use ESD-safe materials and equipment, and consider adding ESD protection devices such as TVS diodes or ESD suppressors in the circuit. Additionally, ensure the device is operated within its recommended voltage and current ratings.
  • The reliability and lifespan of the FDB031N08 depend on various factors, including operating conditions, temperature, and quality of the device. Onsemi provides reliability data and qualification reports for the FDB031N08, which can be used to estimate its lifespan. Additionally, follow proper design and manufacturing guidelines to ensure the device operates within its recommended specifications.

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FDB031N08 Overview

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