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FDC021N30 - onsemi

Description: Last Shipments - N-Channel PowerTrench MOSFET 150V 1.4A, 425mΩ

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FDC021N30 - onsemi - PCB symbol
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PCB Footprints
FDC021N30 - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - TSOT-23 CASE419AG-01 ISSUE O
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FDC021N30 - onsemi - 3D model - SOT23 (6-Pin) - TSOT-23 CASE419AG-01 ISSUE O
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FDC021N30 Details

  • Manufacturer Part Number:

    FDC021N30

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    SOT-6, 6 PIN

  • Manufacturer Package Code:

    419BL

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6.1 A

  • Drain-source On Resistance-Max:

    0.026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JEDEC-95 Code:

    MO-193AA

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Pulsed Drain Current-Max (IDM):

    62 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    34 ns

  • Turn-on Time-Max (ton):

    22 ns

FDC021N30 Frequently Asked Questions (FAQs)

  • The maximum SOA for the FDC021N30 is typically defined by the device's voltage and current ratings. For the FDC021N30, the maximum voltage rating is 30V and the maximum current rating is 21A. Operating the device within these ratings ensures safe operation.
  • Proper thermal management is crucial for the FDC021N30. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material (TIM) to fill any gaps. The heat sink should be designed to dissipate heat efficiently, and the system should be designed to minimize thermal resistance.
  • The recommended gate drive voltage for the FDC021N30 is typically between 4.5V and 10V. A higher gate drive voltage can reduce the device's on-state resistance, but may also increase switching losses.
  • To minimize EMI when using the FDC021N30, use a layout that minimizes loop areas and keeps high-frequency signals away from sensitive nodes. Use shielding, filtering, and grounding techniques to reduce EMI emissions. Additionally, ensure that the device is properly decoupled and that the power supply is well-regulated.
  • The maximum allowed dv/dt for the FDC021N30 is typically around 10V/ns. Exceeding this value can cause the device to malfunction or fail. Ensure that the device is properly snubbed and that the system is designed to minimize voltage transients.

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FDC021N30 Overview

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