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FDD24AN06LA0-F085 - onsemi

Description: N-Channel 60 V 7.1A (Ta), 40A (Tc) 75W (Tc) Surface Mount TO-252AA

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PCB Footprints
FDD24AN06LA0-F085 - onsemi PCB footprint - Other - Other - DPAK3 6.10x6.54x2.29, 4.57P CASE 369AS ISSUE B_2025-1.9
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FDD24AN06LA0-F085 Details

  • Manufacturer Part Number:

    FDD24AN06LA0-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252 3L (DPAK)

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Reach Compliance Code:

    Not Compliant

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    32 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    7.1 A

  • Drain-source On Resistance-Max:

    0.019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDD24AN06LA0-F085 Frequently Asked Questions (FAQs)

  • The maximum junction temperature is 150°C, but it's recommended to keep it below 125°C for reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 1°C/W or lower, and ensuring good airflow around the device.
  • The recommended gate resistor value is between 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, the FDD24AN06LA0-F085 is suitable for high-reliability applications, but it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specifications.
  • To protect the device from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container.

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FDD24AN06LA0-F085 Overview

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Part Image FDD24AN06LA0_F085 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 7.1A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT PACKAGE-3

Part Image FDD24AN06LA0_F085 onsemi

60V, 40A, 16mΩ, DPAK N-Channel PowerTrench®, TO-252 3L (DPAK), 5000-TAPE REEL