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FDD306P - onsemi

Description: RDS(ON) = 41 mΩ @ VGS = -2.5V ; High performance trench technology for extremelylow RDS(ON) ; High power and current handling capability ; RDS(ON) = 28 mΩ @ VGS = -4.5V ; -6.7A, -12V ; Fast switching speed ; RDS(ON) = 90 mΩ @ VGS = -1.8V

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PCB Footprints
FDD306P - onsemi PCB footprint - Other - Other - TO252 (D-PAK), 3-Lead
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FDD306P - onsemi  - 3D model - Other - TO252 (D-PAK), 3-Lead
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FDD306P Details

  • Manufacturer Part Number:

    FDD306P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252, 3 PIN

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    6.7 A

  • Drain-source On Resistance-Max:

    0.028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    430 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    52 W

  • Pulsed Drain Current-Max (IDM):

    54 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    119 ns

  • Turn-on Time-Max (ton):

    45 ns

FDD306P Frequently Asked Questions (FAQs)

  • The FDD306P can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • The FDD306P requires a bias voltage of 12V to 15V, and a bias current of 1mA to 5mA. Ensure the bias circuit is designed to provide a stable voltage and current within these ranges.
  • Use a multi-layer PCB with a solid ground plane to minimize thermal resistance. Ensure good thermal conductivity between the device and the heat sink, and use thermal interface material (TIM) if necessary.
  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Ensure proper handling and storage procedures to prevent ESD damage.
  • The maximum power dissipation for the FDD306P is 2.5W. Ensure the device is properly heat-sinked and the thermal design is optimized to prevent overheating.

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FDD306P Overview

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