FDD3N50NZTM - onsemi

Description: RDS(on) = 2.1Ω ( Typ.)@ VGS = 10V, ID = 1.25A; 100% avalanche tested; Low Crss ( Typ. 2.5pF); ESD improved capability; Low gate charge ( Typ. 6.2nC); Improved dv/dt capability; RoHS compliant

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FDD3N50NZTM - onsemi

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