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FDMS86150A - onsemi

Description: Shielded Gate MOSFET Technology; Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; MSL1 robust package design ; 100% UIL tested ; RoHS Compliant

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FDMS86150A - onsemi

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