FDMS8 Model Download Search Results
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FDMS8672AS
onsemi
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1 | N-Channel PowerTrench® SyncFETTM 30V, 28A, 5.0mΩ | Other | FDMS8672AS |
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FDMS86520
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1 | Max rDS(on) = 7.4 mΩ at VGS = 10 V, ID = 14 A; Max rDS(on) = 10.3 mΩ at VGS = 8 V, ID = 12.5 A; Advanced Package and Silicon combination for low rDS(on) and high efficiency; Next generation enhanced body diode technology, engineered for soft recovery; MSL1 robust package design; 100% UIL tested; RoHS Compliant | Other | FDMS86520 |
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FDMS8320L
onsemi
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1 | Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A ; RoHS Compliant ; Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A ; MSL1 robust package design ; 100% UIL tested ; Next generation enhanced body diode technology, engineered for soft recovery ; Advanced Package and Silicon combination for low rDS(on) and high efficiency | Other | FDMS8320L |
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FDMS86350ET80
onsemi
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1 | MSL1 robust package design ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; RoHS Compliant; Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A ; Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A ; Extended TJ rating to 175°C | Other | FDMS86350ET80 |
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FDMS86255
onsemi
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1 | Next generation enhanced body diode technology, engineered for soft recovery ; Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Shielded Gate MOSFET Technology ; RoHS Compliant ; 100% UIL tested ; Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A ; MSL1 robust package design | Other | FDMS86255 |
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FDMS86182
onsemi
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1 | Shielded Gate MOSFET Technology; Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 28 A; Max rDS(on) = 19.5 mΩ at VGS = 6 V, ID = 14 A; 50% Lower Qrr than Other MOSFET Suppliers; Lowers Switching Noise/EMI; MSL1 Robust Package Design; 100% UIL Tested; RoHS Compliant | Other | FDMS86182 |
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FDMS86320
onsemi
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1 | Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.5 A; Max rDS(on) = 15 mΩ at VGS = 8 V, ID = 8.5 A; Advanced Package and Silicon combination for low rDS(on) and high efficiency; Next generation enhanced body diode technology, engineered for soft recovery; MSL1 robust package design; 100% UIL Tested; RoHS Compliant | Other | FDMS86320 |
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FDMS8025S
onsemi
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1 | Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A ; RoHS Compliant ; SyncFET Schottky Body Diode ; Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A ; 100% UIL tested ; MSL1 robust package design ; Advanced package and silicon combination for low rDS(on) and high efficiency | Other | FDMS8025S |
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FDMS86300
onsemi
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1 | MSL1 robust package design ; Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Next generation enhanced body diode technology, engineered for soft recovery ; 100% UIL tested ; Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A ; RoHS Compliant | Other | FDMS86300 |
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FDMS86150
onsemi
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1 | RoHS Compliant ; MSL1 robust package design ; Shielded Gate MOSFET Technology ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A ; Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A ; 100% UIL tested | Other | FDMS86150 |
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FDMS8460
onsemi
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1 | Max rDS(on) = 2.2mΩ at VGS = 10V, ID = 25A ; MSL1 robust package design ; RoHS Compliant ; Advanced Package and Silicon combination for low rDS(on) ; Max rDS(on) = 3.0mΩ at VGS = 4.5V, ID = 21.7A; 100% UIL tested | Other | FDMS8460 |
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FDMS86103L
onsemi
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1 | Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A ; Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A ; MSL1 robust package design ; Shielded Gate MOSFET Technology | Other | FDMS86103L |
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FDMS86500L
onsemi
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1 | Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 25 A; Max rDS(on) = 3.7 mΩ at VGS = 4.5 V, ID = 20 A; advanced Package and Silicon combination for low rDS(on) and high efficiency; Next generation enhanced body diode technology, engineered for soft recovery; MSL1 robust package design; 100% UIL tested; RoHS Compliant | Other | FDMS86500L |
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FDMS86550
onsemi
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1 | Advanced Package and Silicon combination for low rDS(on) and high efficiency ; RoHS Compliant ; Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A ; 100% UIL tested ; MSL1 robust package design ; Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A | Other | FDMS86550 |
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FDMS86101
onsemi
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1 | Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A ; RoHS compliant ; 100% UIL tested ; Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A ; MSL1 robust package design | Other | FDMS86101 |
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FDMS8320LDC
onsemi
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1 | Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; MSL1 robust package design ; RoHS Compliant ; Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A ; Next generation enhanced body diode technology, engineered for soft recovery; Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A | Other | FDMS8320LDC |
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FDMS86252
onsemi
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1 | MSL1 robust package design ; 100% UIL tested ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A ; RoHS Compliant ; Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A ; Shielded Gate MOSFET Technology | Other | FDMS86252 |
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FDMS86569-F085
onsemi
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1 | Obsolete - N-Channel PowerTrench MOSFET 60V, 50A, 9.6mΩ | Other | FDMS86569-F085 |
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FDMS86152
onsemi
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1 | Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A ; Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A ; MSL1 robust package design ; RoHS Compliant ; 100% UIL tested | Other | FDMS86152 |
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FDMS8018
onsemi
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1 | Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A ; RoHS Compliant ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A ; MSL1 robust package design ; 100% UIL tested ; Next generation enhanced body diode technology, engineered for soft recovery | Other | FDMS8018 |
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FDMS8027S
onsemi
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1 | Advanced Package and Silicon combination for low rDS(on) and high efficiency ; MSL1 robust package design ; Max rDS(on) = 5.0 mO at VGS = 10 V, ID = 18 A ; 100% UIL tested ; SyncFET Schottky Body Diode ; Max rDS(on) = 6.2 mO at VGS = 4.5 V, ID = 16 A ; RoHS Compliant | Other | FDMS8027S |
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FDMS86150ET100
onsemi
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1 | Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; RoHS Compliant ; 100% UIL tested ; Extended TJ rating to 175°C ; Shielded Gate MOSFET Technology ; MSL1 robust package design ; Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A | Other | FDMS86150ET100 |
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FDMS8D8N15C
onsemi
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1 | Shielded Gate MOSFET Technology ; Max rDS(on) = 8.8 mΩ at VGS = 10 V, ID = 67 A ; Max rDS(on) = 9.4 mΩ at VGS = 8 V, ID = 33 A ; 50% Lower Qrr than Other MOSFET Suppliers; Lowers Switching Noise/EMI ; MSL1 Robust Package Design ; 100% UIL Tested ; RoHS Compliant | Other | FDMS8D8N15C |
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FDMS86368-F085
onsemi
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1 | Obsolete - N-Channel PowerTrench MOSFET 80V, 65A, 7.5mΩ | Other | FDMS86368-F085 |
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FDMS86200DC
onsemi
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1 | RoHS Compliant ; Max rDS(on) = 25 mΩ at VGS = 6 V, ID = 7.8 A ; High performance technology for extremely low rDS(on) ; 100% UIL tested ; Shielded Gate MOSFET Technology ; Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 9.3 A ; Dual Cool™ Top Side Cooling PQFN package | Other | FDMS86200DC |
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![Part Image](["https://componentsearchengine.com/2D/0T/15432192.1.2.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FDMS86569-F085.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/FDMS86368-F085.jpg",null,null])
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