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Technical Content

FDMS8 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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FDMS8460 onsemi
1 Max rDS(on) = 2.2mΩ at VGS = 10V, ID = 25A ; MSL1 robust package design ; RoHS Compliant ; Advanced Package and Silicon combination for low rDS(on) ; Max rDS(on) = 3.0mΩ at VGS = 4.5V, ID = 21.7A; 100% UIL tested Other FDMS8460
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FDMS86101 onsemi
1 Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A ; RoHS compliant ; 100% UIL tested ; Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A ; MSL1 robust package design Other FDMS86101
3D model available
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 3
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FDMS86500L onsemi
1 Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 25 A; Max rDS(on) = 3.7 mΩ at VGS = 4.5 V, ID = 20 A; advanced Package and Silicon combination for low rDS(on) and high efficiency; Next generation enhanced body diode technology, engineered for soft recovery; MSL1 robust package design; 100% UIL tested; RoHS Compliant Other FDMS86500L
3D model available
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FDMS86103L onsemi
1 Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A ; Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A ; MSL1 robust package design ; Shielded Gate MOSFET Technology Other FDMS86103L
3D model available
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FDMS86550 onsemi
1 Advanced Package and Silicon combination for low rDS(on) and high efficiency ; RoHS Compliant ; Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A ; 100% UIL tested ; MSL1 robust package design ; Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A Other FDMS86550
3D model available
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 3
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FDMS8320LDC onsemi
1 Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; MSL1 robust package design ; RoHS Compliant ; Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A ; Next generation enhanced body diode technology, engineered for soft recovery; Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A Other FDMS8320LDC
3D model available
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 3
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FDMS8672AS onsemi
1 N-Channel PowerTrench® SyncFETTM 30V, 28A, 5.0mΩ Other FDMS8672AS
3D model available
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 3
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FDMS86150 onsemi
1 RoHS Compliant ; MSL1 robust package design ; Shielded Gate MOSFET Technology ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A ; Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A ; 100% UIL tested Other FDMS86150
3D model available
Symbol and footprint available
 3
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FDMS86300 onsemi
1 MSL1 robust package design ; Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Next generation enhanced body diode technology, engineered for soft recovery ; 100% UIL tested ; Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A ; RoHS Compliant Other FDMS86300
3D model not available
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 2
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FDMS8025S onsemi
1 Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A ; RoHS Compliant ; SyncFET Schottky Body Diode ; Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A ; 100% UIL tested ; MSL1 robust package design ; Advanced package and silicon combination for low rDS(on) and high efficiency Other FDMS8025S
3D model available
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 3
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FDMS86520 onsemi
1 Max rDS(on) = 7.4 mΩ at VGS = 10 V, ID = 14 A; Max rDS(on) = 10.3 mΩ at VGS = 8 V, ID = 12.5 A; Advanced Package and Silicon combination for low rDS(on) and high efficiency; Next generation enhanced body diode technology, engineered for soft recovery; MSL1 robust package design; 100% UIL tested; RoHS Compliant Other FDMS86520
3D model available
Symbol and footprint available
 3
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FDMS86255 onsemi
1 Next generation enhanced body diode technology, engineered for soft recovery ; Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Shielded Gate MOSFET Technology ; RoHS Compliant ; 100% UIL tested ; Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A ; MSL1 robust package design Other FDMS86255
3D model available
Symbol and footprint available
 3
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FDMS86350ET80 onsemi
1 MSL1 robust package design ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; RoHS Compliant; Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A ; Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A ; Extended TJ rating to 175°C Other FDMS86350ET80
3D model available
Symbol and footprint available
 3
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FDMS86182 onsemi
1 Shielded Gate MOSFET Technology; Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 28 A; Max rDS(on) = 19.5 mΩ at VGS = 6 V, ID = 14 A; 50% Lower Qrr than Other MOSFET Suppliers; Lowers Switching Noise/EMI; MSL1 Robust Package Design; 100% UIL Tested; RoHS Compliant Other FDMS86182
3D model available
Symbol and footprint available
 3
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FDMS8320L onsemi
1 Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A ; RoHS Compliant ; Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A ; MSL1 robust package design ; 100% UIL tested ; Next generation enhanced body diode technology, engineered for soft recovery ; Advanced Package and Silicon combination for low rDS(on) and high efficiency Other FDMS8320L
3D model available
Symbol and footprint available
 3
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FDMS86105 onsemi
1 100% UIL tested; Advanced package and silicon combination for low rDS(on) and high efficiency; Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A; Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A; MSL1 robust package design; RoHS Compliant; Shielded Gate MOSFET Technology Other FDMS86105
3D model available
Symbol and footprint available
 3
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FDMS86200DC onsemi
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1 RoHS Compliant ; Max rDS(on) = 25 mΩ at VGS = 6 V, ID = 7.8 A ; High performance technology for extremely low rDS(on) ; 100% UIL tested ; Shielded Gate MOSFET Technology ; Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 9.3 A ; Dual Cool™ Top Side Cooling PQFN package Other FDMS86200DC
3D model available
Symbol and footprint available
 3
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FDMS86201 onsemi
1 RoHS Compliant ; 100% UIL tested ; Advanced Package and Silicon combination for low rDS(on)and high efficiency ; Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A ; Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A ; MSL1 robust package design ; Shielded Gate MOSFET Technology Other FDMS86201
3D model available
Symbol and footprint available
 3
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FDMS86500DC onsemi
1 Dual Cool™ Top Side Cooling PQFN package; Max rDS(on) = 2.3 mΩ at VGS(on) = 10 V, ID = 29 A; Max rDS(on) = 3.3 mΩ at VGS(on) = 8 V, ID = 24 A; High performance technology for extremely low rDS(on); 100% UIL Tested; RoHS Compliant Other FDMS86500DC
3D model available
Symbol and footprint available
 3
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FDMS86101DC onsemi
1 Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A ; Dual Cool™ Top Side Cooling PQFN package ; 100% UIL Tested ; Shielded Gate MOSFET Technology ; Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A ; RoHS Compliant ; High performance technology for extremely low rDS(on) Other FDMS86101DC
3D model available
Symbol and footprint available
 3
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FDMS86181 onsemi
1 Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A ; RoHS Compliant ; Lowers switching noise/EMI ; 50% lower Qrr than other MOSFET suppliers ; ADD ; 100% UIL tested ; MSL1 robust package design ; Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A ; Shielded Gate MOSFET Technology Other FDMS86181
3D model available
Symbol and footprint available
 3
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FDMS8027S onsemi
1 Advanced Package and Silicon combination for low rDS(on) and high efficiency ; MSL1 robust package design ; Max rDS(on) = 5.0 mO at VGS = 10 V, ID = 18 A ; 100% UIL tested ; SyncFET Schottky Body Diode ; Max rDS(on) = 6.2 mO at VGS = 4.5 V, ID = 16 A ; RoHS Compliant Other FDMS8027S
3D model available
Symbol and footprint available
 3
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FDMS86150ET100 onsemi
1 Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; RoHS Compliant ; 100% UIL tested ; Extended TJ rating to 175°C ; Shielded Gate MOSFET Technology ; MSL1 robust package design ; Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A Other FDMS86150ET100
3D model available
Symbol and footprint available
 3
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FDMS8D8N15C onsemi
1 Shielded Gate MOSFET Technology ; Max rDS(on) = 8.8 mΩ at VGS = 10 V, ID = 67 A ; Max rDS(on) = 9.4 mΩ at VGS = 8 V, ID = 33 A ; 50% Lower Qrr than Other MOSFET Suppliers; Lowers Switching Noise/EMI ; MSL1 Robust Package Design ; 100% UIL Tested ; RoHS Compliant Other FDMS8D8N15C
3D model available
Symbol and footprint available
 3
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FDMS86368-F085 onsemi
1 Obsolete - N-Channel PowerTrench MOSFET 80V, 65A, 7.5mΩ Other FDMS86368-F085
3D model available
Symbol and footprint available
 3
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