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FDMS86300 - onsemi

Description: MSL1 robust package design ; Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Next generation enhanced body diode technology, engineered for soft recovery ; 100% UIL tested ; Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A ; RoHS Compliant

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PCB Footprints
FDMS86300 - onsemi PCB footprint - Other - Other - Power_56
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FDMS86300 Details

  • Manufacturer Part Number:

    FDMS86300

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    QFN-8

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    252 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    122 A

  • Drain-source On Resistance-Max:

    0.0039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    63 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    556 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    76 ns

  • Turn-on Time-Max (ton):

    93 ns

FDMS86300 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDMS86300 involves keeping the high-frequency switching nodes (e.g., drain-source voltage) away from sensitive analog nodes, using a solid ground plane, and minimizing loop areas to reduce EMI.
  • To optimize the gate drive circuit, ensure the gate drive voltage is within the recommended range (typically 10-15V), use a low-impedance gate drive circuit, and consider adding a gate resistor to slow down the turn-on/turn-off transitions and reduce ringing.
  • The maximum allowed junction temperature for the FDMS86300 is 150°C. Operating the device above this temperature can reduce its lifespan and affect its performance.
  • To protect the FDMS86300, use a voltage regulator to limit the input voltage, add overvoltage protection (OVP) and overcurrent protection (OCP) circuits, and consider using a fuse or a current-limiting resistor in series with the device.
  • A good thermal management strategy for the FDMS86300 involves using a heat sink with a thermal interface material, ensuring good airflow around the device, and using thermal vias in the PCB to dissipate heat efficiently.

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FDMS86300 Overview

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