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FDMS86350ET80 - onsemi

Description: MSL1 robust package design ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; RoHS Compliant; Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A ; Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A ; Extended TJ rating to 175°C

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Symbol
FDMS86350ET80 - onsemi - PCB symbol
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PCB Footprints
FDMS86350ET80 - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AG ISSUE O_FFW
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3D Models
FDMS86350ET80 - onsemi - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AG ISSUE O_FFW
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FDMS86350ET80 Details

  • Manufacturer Part Number:

    FDMS86350ET80

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    864 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    198 A

  • Drain-source On Resistance-Max:

    0.0024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    187 W

  • Pulsed Drain Current-Max (IDM):

    693 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    85 ns

  • Turn-on Time-Max (ton):

    135 ns

FDMS86350ET80 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDMS86350ET80 involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the compensation network, start by selecting the desired crossover frequency and phase margin. Then, use the datasheet's compensation network design equations to calculate the required component values. Finally, use simulation tools or empirical methods to fine-tune the compensation network for optimal stability and transient response.
  • The maximum allowed voltage on the VIN pin of the FDMS86350ET80 is 26V, with a recommended operating range of 4.5V to 18V. Exceeding this voltage may damage the device.
  • To ensure proper thermal management, ensure a good thermal interface between the device and the PCB, use a heat sink if necessary, and keep the device away from heat sources. Monitor the device's junction temperature (TJ) and adjust the thermal design as needed to keep TJ below the maximum rating of 150°C.
  • The EN (enable) pin is used to enable or disable the device. When EN is high, the device is enabled, and when EN is low, the device is disabled. Use the EN pin to implement power sequencing, fault detection, or to reduce power consumption in standby modes.

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