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FDMS86182 - onsemi

Description: Shielded Gate MOSFET Technology; Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 28 A; Max rDS(on) = 19.5 mΩ at VGS = 6 V, ID = 14 A; 50% Lower Qrr than Other MOSFET Suppliers; Lowers Switching Noise/EMI; MSL1 Robust Package Design; 100% UIL Tested; RoHS Compliant

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PCB Footprints
FDMS86182 - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A
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3D Models
FDMS86182 - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A
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FDMS86182 Details

  • Manufacturer Part Number:

    FDMS86182

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-02-03

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    216 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    78 A

  • Drain-source On Resistance-Max:

    0.0072 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    364 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    43 ns

  • Turn-on Time-Max (ton):

    34 ns

FDMS86182 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • Choose an inductor with a high saturation current, low DC resistance, and a suitable inductance value (e.g., 1-10 μH). Ensure the inductor's physical size and thermal rating are compatible with the system design.
  • Use a star-point grounding scheme, keep high-frequency traces short and away from sensitive nodes, and use shielding or guard rings around sensitive components. Implement a common-mode choke or EMI filter if necessary.
  • Choose a capacitor with a high ripple current rating, low equivalent series resistance (ESR), and a suitable capacitance value (e.g., 10-100 μF). Ensure the capacitor's voltage rating exceeds the maximum output voltage.

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FDMS86182 Overview

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