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FDMS8320L - onsemi

Description: Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A ; RoHS Compliant ; Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A ; MSL1 robust package design ; 100% UIL tested ; Next generation enhanced body diode technology, engineered for soft recovery ; Advanced Package and Silicon combination for low rDS(on) and high efficiency

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FDMS8320L - onsemi - PCB symbol
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PCB Footprints
FDMS8320L - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE
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3D Models
FDMS8320L - onsemi - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE
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FDMS8320L Details

  • Manufacturer Part Number:

    FDMS8320L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    ROHS COMPLIANT, POWER 56, 8 PIN

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    264 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.0011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS8320L Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the high-current paths short and use a common grounding point for the device. Use a shielded inductor and keep the switching node (SW) away from sensitive nodes.
  • Use the recommended compensation network values in the datasheet as a starting point. Then, adjust the values based on the specific application requirements and the desired transient response. Use a network analyzer or a Bode plot to fine-tune the compensation network.
  • The maximum allowed voltage on the VIN pin is 28V. Exceeding this voltage may damage the device. Ensure that the input voltage is within the recommended operating range to ensure reliable operation.
  • Use a thermal design that ensures good heat dissipation, such as a heat sink or a thermal pad. Monitor the device temperature using a thermocouple or a thermal sensor. Ensure that the device is operated within the recommended junction temperature range of -40°C to 150°C.
  • A low-ESR ceramic capacitor with a value of 10uF to 22uF is recommended. The capacitor should be placed close to the VIN pin and the GND pin to minimize parasitic inductance.

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FDMS8320L Overview

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