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FDMS86255 - onsemi

Description: Next generation enhanced body diode technology, engineered for soft recovery ; Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Shielded Gate MOSFET Technology ; RoHS Compliant ; 100% UIL tested ; Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A ; MSL1 robust package design

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PCB Footprints
FDMS86255 - onsemi PCB footprint - Other - Other - FDMS86255-1
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FDMS86255 - onsemi  - 3D model - Other - FDMS86255-1
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FDMS86255 Details

  • Manufacturer Part Number:

    FDMS86255

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    ROHS COMPLIANT, POWER 56, 8 PIN

  • Manufacturer Package Code:

    483AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.12

  • Avalanche Energy Rating (Eas):

    541 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.0124 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    113 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS86255 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
  • Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a stable voltage regulator and decoupling capacitors to minimize noise and ripple.
  • The maximum allowed current through the internal switch is 2.5A. Exceeding this limit may cause overheating and reduce the device's lifespan.
  • Use a voltage supervisor or a voltage monitor IC to detect overvoltage and undervoltage conditions. Implement a reset or shutdown mechanism to protect the device and the system.
  • Use a TVS (Transient Voltage Suppressor) diode or a zener diode with a voltage rating higher than the maximum input voltage to protect the device from ESD events.

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FDMS86255 Overview

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