Part Image

FDMS8320LDC - onsemi

Description: Advanced Package and Silicon combination for low rDS(on) and high efficiency ; 100% UIL tested ; MSL1 robust package design ; RoHS Compliant ; Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A ; Next generation enhanced body diode technology, engineered for soft recovery; Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A

Download FDMS8320LDC Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDMS8320LDC - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AG ISSUE O
click to zoom
3D Models
FDMS8320LDC - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AG ISSUE O
click to zoom

FDMS8320LDC Details

  • Manufacturer Part Number:

    FDMS8320LDC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN-8

  • Package Description:

    ROHS COMPLIANT, POWER 56, 8 PIN

  • Manufacturer Package Code:

    506EG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    661 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    44 A

  • Drain-source On Resistance-Max:

    0.0011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS8320LDC Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a bypass capacitor (CBYP) to ensure proper biasing. A 10uF capacitor is recommended for CBYP. Additionally, the input voltage should be filtered to prevent noise and ripple.
  • The maximum allowed current through the device is 2A. Exceeding this limit may cause the device to overheat or fail.
  • An overvoltage protection (OVP) circuit and an undervoltage lockout (UVLO) circuit can be implemented to protect the device from voltage transients and faults. A zener diode or a voltage regulator can be used for OVP, and a voltage supervisor IC can be used for UVLO.
  • The recommended operating temperature range for the FDMS8320LDC is -40°C to 150°C. Operating the device outside this range may affect its performance and reliability.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDMS8320LDC Overview

Use the download button to access the FDMS8320LDC schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDMS8, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDMS8320LDC

Showing 0 results