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FDMS86101 - onsemi

Description: Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A ; RoHS compliant ; 100% UIL tested ; Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A ; MSL1 robust package design

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PCB Footprints
FDMS86101 - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE B_2021
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3D Models
FDMS86101 - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE B_2021
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FDMS86101 Details

  • Manufacturer Part Number:

    FDMS86101

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    135 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    12.4 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS86101 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the high-frequency traces short and away from the power plane. Use a common mode choke or a ferrite bead to filter the input power.
  • Ensure the input voltage is within the recommended range (4.5V to 5.5V). Use a stable voltage regulator and decouple the input with a 10uF capacitor. The device has an internal bias circuit, so no external biasing is required.
  • The maximum allowable input voltage ripple is 100mV peak-to-peak. Exceeding this may affect the device's performance and reliability.
  • Use a voltage supervisor or a reset IC to monitor the input voltage and reset the device if it falls outside the recommended range. You can also add overvoltage protection (OVP) and undervoltage protection (UVP) circuits to prevent damage.
  • The recommended operating temperature range is -40°C to 125°C. However, the device can operate up to 150°C for short periods. Ensure proper thermal design and heat sinking to maintain a safe operating temperature.

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FDMS86101 Overview

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