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FDMS86520 - onsemi

Description: Max rDS(on) = 7.4 mΩ at VGS = 10 V, ID = 14 A; Max rDS(on) = 10.3 mΩ at VGS = 8 V, ID = 12.5 A; Advanced Package and Silicon combination for low rDS(on) and high efficiency; Next generation enhanced body diode technology, engineered for soft recovery; MSL1 robust package design; 100% UIL tested; RoHS Compliant

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Symbol
FDMS86520 - onsemi - PCB symbol
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PCB Footprints
FDMS86520 - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE B
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3D Models
FDMS86520 - onsemi - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE B
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FDMS86520 Details

  • Manufacturer Part Number:

    FDMS86520

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    QFN-8

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    86 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.0074 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    69 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS86520 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDMS86520 involves keeping the high-frequency switching nodes (e.g., drain-source voltage) away from sensitive analog nodes, using a solid ground plane, and minimizing loop areas to reduce EMI.
  • To ensure proper biasing, connect the VCC pin to a stable 5V supply, and the EN pin to a logic-level signal (e.g., 3.3V or 5V) to enable the device. Also, ensure the input voltage (VIN) is within the recommended range (4.5V to 18V).
  • The maximum allowable power dissipation for the FDMS86520 is dependent on the ambient temperature and the thermal resistance of the package. Refer to the datasheet for the thermal resistance values and calculate the maximum power dissipation accordingly.
  • The FDMS86520 is rated for operation up to 150°C (TJ). However, the device's performance and reliability may degrade at high temperatures. Ensure proper thermal management and consider derating the device's power handling at elevated temperatures.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the FDMS86520. OVP can be achieved using a voltage supervisor or a zener diode, while OCP can be implemented using a current sense resistor and a comparator.

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FDMS86520 Overview

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