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FDMS86150ET100 - onsemi

Description: Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; RoHS Compliant ; 100% UIL tested ; Extended TJ rating to 175°C ; Shielded Gate MOSFET Technology ; MSL1 robust package design ; Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A

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PCB Footprints
FDMS86150ET100 - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AG ISSUE O_FFW
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3D Models
FDMS86150ET100 - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AG ISSUE O_FFW
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FDMS86150ET100 Details

  • Manufacturer Part Number:

    FDMS86150ET100

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    726 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    128 A

  • Drain-source On Resistance-Max:

    0.00485 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    187 W

  • Pulsed Drain Current-Max (IDM):

    617 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    57 ns

  • Turn-on Time-Max (ton):

    50 ns

FDMS86150ET100 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
  • Yes, the FDMS86150ET100 is suitable for high-frequency switching applications up to 1 MHz. However, ensure proper PCB layout, decoupling, and snubber circuits to minimize ringing and EMI.
  • Use a TVS diode or a zener diode to clamp overvoltages, and consider adding a current sense resistor and a fuse or a current limiter to protect against overcurrent conditions.

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FDMS86150ET100 Overview

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