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FDP3672 - onsemi

Description: RDS(on) = 25mΩ (Typ.) @ VGS = 10V, ID = 41A; Optimized Efficiency at High Frequencies; Low Miller Charge; Low Qrr Body Diode; QG(tot) = 28nC (Typ.) @ VGS = 10V; UIS Capability (Single Pulse and Repetitive Pulse)

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FDP3672 Alternates

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Part Image FDP3672 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5.9A I(D), 105V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB