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FDPC1012S - onsemi

Description: Q1: N-Channel Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 12 A Q2: N-Channel Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 23 A; Low inductance packaging shortens rise/fall times, resulting in lower switching losses; MOSFET integration enables optimum layout for lower circuitinductance and reduced switch node ringing; RoHS Compliant

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FDPC1012S - onsemi

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