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FDPF18N50T - onsemi

Description: Low Crss ( Typ. 25pF); 100% avalanche tested; RDS(on) = 220mΩ ( Typ.)@ VGS = 10V, ID = 9A; Low gate charge ( Typ. 45nC)

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FDPF18N50T - onsemi  - 3D model
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FDPF18N50T Details

  • Manufacturer Part Number:

    FDPF18N50T

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    945 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.265 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38.5 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDPF18N50T Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FDPF18N50T can withstand is 175°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate resistor value for the FDPF18N50T is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, the FDPF18N50T is qualified to automotive and industrial standards, making it suitable for high-reliability applications. However, it's essential to follow proper design and manufacturing guidelines to ensure the device meets the required reliability standards.
  • To protect the FDPF18N50T from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure that all equipment and tools used during handling and assembly are also ESD-protected.

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FDPF18N50T Overview

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Part Image FDPF18N50T Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB