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FDPF770N15A - onsemi

Description: Obsolete - Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM, 500V, 5A, 1.5Ω, TO-220F

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FDPF770N15A - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE A
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FDPF770N15A - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE A
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FDPF770N15A
  • Part Number FDPF770N15A
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (N-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE A
  • Released Date Jan 28, 2019
  • Last Modified Date Sep 19, 2024 2:45 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FDPF770N15A Details

  • Manufacturer Part Number:

    FDPF770N15A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F (RETRACTABLE), 3 PIN

  • Manufacturer Package Code:

    221AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    35 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.077 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    20 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDPF770N15A Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) of the FDPF770N15A is 175°C. It's essential to ensure that the device operates within this temperature range to prevent damage or degradation.
  • To calculate the power dissipation (PD) of the FDPF770N15A, use the following formula: PD = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current. Make sure to consider the device's thermal resistance (RθJA) and the ambient temperature (TA) to ensure safe operation.
  • For optimal performance and minimal EMI, follow these PCB layout guidelines: 1) Keep the input and output capacitors close to the device, 2) Use a solid ground plane, 3) Minimize trace lengths and widths, 4) Avoid routing sensitive signals near the device, and 5) Use a thermal relief pattern for the device's thermal pad.
  • Yes, the FDPF770N15A can be used in a synchronous rectification configuration. However, ensure that the device is properly biased and that the gate drive voltage is within the recommended range (typically 10-15V) to prevent damage or malfunction.
  • When selecting input and output capacitors for the FDPF770N15A, consider the following factors: 1) Capacitance value, 2) Equivalent series resistance (ESR), 3) Voltage rating, and 4) Temperature rating. Choose capacitors with low ESR, high voltage ratings, and suitable temperature ratings to ensure stable operation and minimize losses.

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