Part Image

FDS6375 - onsemi

Description: High performance trench technology for extremely low RDS(ON) ; Fast switching speed ; High power and current handling capability ; Low gate charge (26nC typical) ; RDS(on) = 24 mΩ @ VGS = -4.5 V ; RDS(on) = 32 mΩ @ VGS = -2.5 V ; -8.0 A, -20 V

Download FDS6375 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDS6375 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC 8
click to zoom
3D Models
FDS6375 - onsemi  - 3D model - Small Outline Packages - SOIC 8
click to zoom

FDS6375 Details

  • Manufacturer Part Number:

    FDS6375

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    229 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 13 INCH

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    289 ns

  • Turn-on Time-Max (ton):

    39 ns

FDS6375 Frequently Asked Questions (FAQs)

  • The maximum current rating of the FDS6375 is 3.5A, but it's recommended to operate it at 2.5A or less for optimal performance and reliability.
  • To ensure proper biasing, connect the gate pin to a voltage source through a 1kΩ to 10kΩ resistor, and connect the source pin to a voltage source through a 100Ω to 1kΩ resistor. Also, ensure the drain pin is connected to a load or a voltage source.
  • The recommended operating temperature range for the FDS6375 is -55°C to 150°C. However, it's recommended to operate it within -40°C to 125°C for optimal performance and reliability.
  • To protect the FDS6375 from ESD, handle the device by the body or use an anti-static wrist strap, and store it in an anti-static bag or container. Also, ensure the PCB is designed with ESD protection in mind.
  • The maximum voltage rating of the FDS6375 is 30V, but it's recommended to operate it at 20V or less for optimal performance and reliability.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDS6375 Overview

Use the download button to access the FDS6375 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDS63, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDS6375

Showing 0 results

FDS6375 Alternates

Showing results

Image Part Number Model
Part Image FDS6375T/R onsemi

Power Field-Effect Transistor, 8A I(D), 20V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS6375F011 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8A I(D), 20V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET