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FJD5553TM - onsemi

Description: High Voltage Fast Switching Transistor

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FJD5553TM - onsemi  - 3D model
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FJD5553TM Details

  • Manufacturer Part Number:

    FJD5553TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    400 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    1.25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FJD5553TM Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor junction temperature and adjust the system design accordingly.
  • Monitor the device's junction temperature, voltage, and current. Implement over-temperature protection, over-voltage protection, and over-current protection to prevent damage.
  • Use a gate driver with a high current capability (>1A) and a low output impedance. Ensure the gate drive voltage is within the recommended range (10-15V) and the rise/fall times are <10ns.
  • Implement ESD protection diodes (e.g., TVS diodes) on the input and output pins. Use a PCB layout with a solid ground plane and a Faraday cage structure to minimize ESD susceptibility.

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FJD5553TM Overview

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