FOD8318R2 - onsemi
Description: Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); DIN EN/IEC 60747-5-5,1,414 V (peak) workinginsulation voltage, 8000 V (peak) transient isolationvoltage ratings; User configurable: inverting, non-inverting, auto-reset,auto-shutdown; 2.5 A peak output current driving capability for most 1200 V/150A IGBT; 35 kV / μs Minimum Common Mode Rejection (VCM = 1500 VPK); Wide supply voltage range from 15V to 30V; High Speed; Desaturation detection;
ECAD model is currently unavailable for this part
