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FOD8342R2
onsemi
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1 | FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation; 3.0 A Peak Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail; 20 kV/µs Minimum Common Mode Rejection; Wide Supply Voltage Range: 10 V to 30 V; Fast Switching Speed Over Full Operating Temperature Range – 210 ns Maximum Propagation Delay – 65 ns Maximum Pulse Width Distortion; | Small Outline Packages | FOD8342R2 |
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FOD8316R2V
onsemi
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1 | Wide supply voltage range from 15V to 30V; 2.5A peak output current driving capability for most 1200V/150A IGBT; User configurable: inverting, non-inverting, auto-reset, auto-shutdown; Under voltage lockout protection; 3.3V/5V, CMOS/TTL compatible inputs; High Speed; 1,414V (peak) working voltage rating; Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); RDS(ON) of 1 Ω (typ.) offers lower power dissipation; 8mm creepage and clearance distanc | Small Outline Packages | FOD8316R2V |
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FOD8332R2
onsemi
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1 | 100 ns Maximum Pulse Width Distortion; Active Miller Clamp to Shut Off IGBT During High dv/dt without Negative Supply Voltage; P-Channel MOSFETs at Output Stage Enable Output Voltage Swing Close to Supply Rail (Rail-to-Rail Output); Fast Switching Speed Over Full Operating Temperature Range; Wide Supply Voltage Range: 15 V to 30 V; 2.5 A Peak Output Current Driving Capability for Medium Power IGBT; UL1577, 4,243 V RMS for 1 Minute; Extended Industrial Temperate Range: –40°C to 100°C; 250 ns Maximum Propagat | Small Outline Packages | FOD8332R2 |
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FOD8321
onsemi
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1 | 2.5A Output Current, Gate Drive Optocoupler in Optoplanar® Wide Body SOP 5-Pin | Other | FOD8321 |
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FOD8343T
onsemi
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1 | Fast Switching Speed Over Full Operating Temperature Range – 210 ns Maximum Propagation Delay – 65 ns Maximum Pulse Width Distortion; Under-Voltage Lockout (UVLO) with Hysteresis; Extended Industrial Temperate Range: -40°C to 100°C; Safety and Regulatory Approvals: – UL1577, 5,000 VRMS for 1 Minute – DIN EN/IEC60747-5-5, 1,140V Peak Working Insulation Voltage; FOD8343T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation; 4.0 A Peak Output Cu | Small Outline Packages | FOD8343T |
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FOD8334
onsemi
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1 | Input LED Drive Facilitates Receiving Digitally Encoded Signals from PWM Output; Optically Isolated Fault-Sensing Feedback; Active Miller Clamp to Shut Off IGBT During High dv/dt without Negative Supply Voltage; High Noise Immunity Characterized by Common Mode Rejection – 35 kV/μs Minimum, VCM = 1500 VPEAK; 4.0 A Maximum Peak Output Current Driving Capability for Medium Power IGBT – P-Channel MOSFETs at Output Stage Enable Output Voltage Swing Close to Supply Rail (Rail-to-Rail Output) – Wide Supply Voltage | Small Outline Packages | FOD8334 |
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FOD8342TR2V
onsemi
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1 | FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation; 3.0 A Peak Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail; 20 kV/µs Minimum Common Mode Rejection; Wide Supply Voltage Range: 10 V to 30 V; Fast Switching Speed Over Full Operating Temperature Range – 210 ns Maximum Propagation Delay – 65 ns Maximum Pulse Width Distortion; | Small Outline Packages | FOD8342TR2V |
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FOD8342T
onsemi
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1 | FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation; 3.0 A Peak Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail; 20 kV/µs Minimum Common Mode Rejection; Wide Supply Voltage Range: 10 V to 30 V; Fast Switching Speed Over Full Operating Temperature Range – 210 ns Maximum Propagation Delay – 65 ns Maximum Pulse Width Distortion; | Small Outline Packages | FOD8342T |
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FOD8318V
onsemi
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1 | Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); DIN EN/IEC 60747-5-5,1,414 V (peak) workinginsulation voltage, 8000 V (peak) transient isolationvoltage ratings; User configurable: inverting, non-inverting, auto-reset,auto-shutdown; 2.5 A peak output current driving capability for most 1200 V/150A IGBT; 35 kV / μs Minimum Common Mode Rejection (VCM = 1500 VPK); Wide supply voltage range from 15V to 30V; High Speed; Desaturation detection; | Small Outline Packages | FOD8318V |
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FOD8332V
onsemi
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1 | 100 ns Maximum Pulse Width Distortion; Active Miller Clamp to Shut Off IGBT During High dv/dt without Negative Supply Voltage; P-Channel MOSFETs at Output Stage Enable Output Voltage Swing Close to Supply Rail (Rail-to-Rail Output); Fast Switching Speed Over Full Operating Temperature Range; Wide Supply Voltage Range: 15 V to 30 V; 2.5 A Peak Output Current Driving Capability for Medium Power IGBT; UL1577, 4,243 V RMS for 1 Minute; Extended Industrial Temperate Range: –40°C to 100°C; 250 ns Maximum Propagat | Small Outline Packages | FOD8332V |
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FOD8342
onsemi
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1 | FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation; 3.0 A Peak Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail; 20 kV/µs Minimum Common Mode Rejection; Wide Supply Voltage Range: 10 V to 30 V; Fast Switching Speed Over Full Operating Temperature Range – 210 ns Maximum Propagation Delay – 65 ns Maximum Pulse Width Distortion; | Small Outline Packages | FOD8342 |
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FOD8343
onsemi
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1 | Fast Switching Speed Over Full Operating Temperature Range – 210 ns Maximum Propagation Delay – 65 ns Maximum Pulse Width Distortion; Under-Voltage Lockout (UVLO) with Hysteresis; Extended Industrial Temperate Range: -40°C to 100°C; Safety and Regulatory Approvals: – UL1577, 5,000 VRMS for 1 Minute – DIN EN/IEC60747-5-5, 1,140V Peak Working Insulation Voltage; FOD8343T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation; 4.0 A Peak Output Cu | Small Outline Packages | FOD8343 |
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FOD8314TR2V
onsemi
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1 | 1.0 A Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail; 20 kV/μs Minimum Common Mode Rejection; Wide Supply Voltage Range: 15 V to 30 V; Fast Switching Speed Over Full Operating Temperature Range – 500 ns Maximum Propagation Delay – 300 ns Maximum Pulse Width Distortion; Under-Voltage Lockout (UVLO) with Hysteresis; Extended Industrial Temperate Range: -40°C to 100°C; Safety and Regulatory Approvals: – | Small Outline Packages | FOD8314TR2V |
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FOD8332R2V
onsemi
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1 | 100 ns Maximum Pulse Width Distortion; Active Miller Clamp to Shut Off IGBT During High dv/dt without Negative Supply Voltage; P-Channel MOSFETs at Output Stage Enable Output Voltage Swing Close to Supply Rail (Rail-to-Rail Output); Fast Switching Speed Over Full Operating Temperature Range; Wide Supply Voltage Range: 15 V to 30 V; 2.5 A Peak Output Current Driving Capability for Medium Power IGBT; UL1577, 4,243 V RMS for 1 Minute; Extended Industrial Temperate Range: –40°C to 100°C; 250 ns Maximum Propagat | Small Outline Packages | FOD8332R2V |
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FOD8332
onsemi
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1 | 100 ns Maximum Pulse Width Distortion; Active Miller Clamp to Shut Off IGBT During High dv/dt without Negative Supply Voltage; P-Channel MOSFETs at Output Stage Enable Output Voltage Swing Close to Supply Rail (Rail-to-Rail Output); Fast Switching Speed Over Full Operating Temperature Range; Wide Supply Voltage Range: 15 V to 30 V; 2.5 A Peak Output Current Driving Capability for Medium Power IGBT; UL1577, 4,243 V RMS for 1 Minute; Extended Industrial Temperate Range: –40°C to 100°C; 250 ns Maximum Propagat | Small Outline Packages | FOD8332 |
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FOD8342R2V
onsemi
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1 | FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation; 3.0 A Peak Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail; 20 kV/µs Minimum Common Mode Rejection; Wide Supply Voltage Range: 10 V to 30 V; Fast Switching Speed Over Full Operating Temperature Range – 210 ns Maximum Propagation Delay – 65 ns Maximum Pulse Width Distortion; | Small Outline Packages | FOD8342R2V |
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FOD8320
onsemi
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1 | High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler in Optoplanar® Wide Body SOP 5-Pin | Other | FOD8320 |
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FOD8343R2
onsemi
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1 | Fast Switching Speed Over Full Operating Temperature Range – 210 ns Maximum Propagation Delay – 65 ns Maximum Pulse Width Distortion; Under-Voltage Lockout (UVLO) with Hysteresis; Extended Industrial Temperate Range: -40°C to 100°C; Safety and Regulatory Approvals: – UL1577, 5,000 VRMS for 1 Minute – DIN EN/IEC60747-5-5, 1,140V Peak Working Insulation Voltage; FOD8343T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation; 4.0 A Peak Output Cu | Small Outline Packages | FOD8343R2 |
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FOD8334R2
onsemi
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1 | Input LED Drive Facilitates Receiving Digitally Encoded Signals from PWM Output; Optically Isolated Fault-Sensing Feedback; Active Miller Clamp to Shut Off IGBT During High dv/dt without Negative Supply Voltage; High Noise Immunity Characterized by Common Mode Rejection – 35 kV/μs Minimum, VCM = 1500 VPEAK; 4.0 A Maximum Peak Output Current Driving Capability for Medium Power IGBT – P-Channel MOSFETs at Output Stage Enable Output Voltage Swing Close to Supply Rail (Rail-to-Rail Output) – Wide Supply Voltage | Small Outline Packages | FOD8334R2 |
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FOD8321R2
onsemi
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1 | 2.5A Output Current, Gate Drive Optocoupler in Optoplanar® Wide Body SOP 5-Pin | Other | FOD8321R2 |
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FOD8333R2V
onsemi
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1 | 250 ns Maximum Propagation Delay; “Soft” IGBT Turn-Off; Automatic Fault Reset after Fixed Mute Time, Typically 33 μs; Extended Industrial Temperate Range:; Fast Switching Speed Over Full Operating Temperature Range; 2.5 A Peak Output Current Driving Capability for Medium Power IGBT; High Noise Immunity Characterized by Common Mode Rejection – 35 kV/μs Minimum, VCM = 1500 VPEAK; Desaturation Detection; Integrated IGBT Protection; UL1577, 4,243 VRMS for 1 Minute; Wide Supply Voltage Range: 15 V to 30 V; DIN-E | Small Outline Packages | FOD8333R2V |
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FOD8318
onsemi
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1 | Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output); DIN EN/IEC 60747-5-5,1,414 V (peak) workinginsulation voltage, 8000 V (peak) transient isolationvoltage ratings; User configurable: inverting, non-inverting, auto-reset,auto-shutdown; 2.5 A peak output current driving capability for most 1200 V/150A IGBT; 35 kV / μs Minimum Common Mode Rejection (VCM = 1500 VPK); Wide supply voltage range from 15V to 30V; High Speed; Desaturation detection; | Small Outline Packages | FOD8318 |
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FOD8342V
onsemi
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1 | FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation; 3.0 A Peak Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail; 20 kV/µs Minimum Common Mode Rejection; Wide Supply Voltage Range: 10 V to 30 V; Fast Switching Speed Over Full Operating Temperature Range – 210 ns Maximum Propagation Delay – 65 ns Maximum Pulse Width Distortion; | Small Outline Packages | FOD8342V |
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FOD8320R2V
onsemi
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1 | DIN EN/IEC60747-5-2 (Pending Apprroval); UL1577, 5,000VRMS for 1 min. ; 100ns Max. Pulse Width Distortion ■ Under-Voltage Lockout (UVLO) with Hysteresis ■ Extended Industrial Temperate Range: -40 to 100°C ■ Safety and Regulatory Approvals: ; P-Channel MOSFETs at Output Stage Enable Output Voltage Swing Close to Supply Rail ■ 35kV/μs Minimum Common Mode Rejection ■ Wide Supply Voltage Range: 15V to 30V ■ Fast Switching Speed Over Full Operating Temperature Range: ; 400ns Max. Propagation Delay ; ■ Fairchild’ | Small Outline Packages | FOD8320R2V |
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FOD8383
onsemi
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1 | 2.5 A Output Current Driving Capability for Medium-Power IGBT/MOSFET; Safety and Regulatory Approvals:; Extended Industrial Temperate Range: -40°C to 100°C; Under-Voltage Lockout (UVLO) with Hysteresis; 35 kV/μs Minimum Common Mode Rejection; Reliable and High-Voltage Insulation with Greater than 10 mm Creepage and Clearance Distance and 0.5 mm Internal Insulation Distance; 65 ns Maximum Pulse-Width Distortion; Fast Switching Speed Over Full Operating Temperature Range; DIN-EN/IEC60747-5-5, 1,414 V Peak Wor | Small Outline Packages | FOD8383 |
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![Part Image](["https://componentsearchengine.com/Images/1/FOD8321.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/FOD8321R2.jpg",null,null])
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